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August 12 news:
you and I call the phone communication, computer networking tour the world, touch screen video ...... enjoy all this without the central role of the integrated circuit chip. Little transistor chip based devices as one of its direct impact on the structure and function of the chip effect, also known as the "Information Age of bricks." Recently, the Shanghai scientists first proposed and implemented a semi-floating-gate transistor structure of this new microelectronic devices, the future, the original results may give the world a significant impact in chip manufacturing.
Aug. 9 issue of "Science" magazine published the Fudan School of Microelectronics Zhang Wei team's paper, which is China's top scientists in the academic journals published in the field of microelectronic devices first original results.
Modern integrated circuit technology is mainly based on "Moore's Law": transistors on a chip feature sizes continue to shrink, the number increases every 18 months to double the chip performance has been increasing. In the past few decades, scientists from various countries go all out to put more transistors into a smaller chip. Currently a commercially available 22-nanometer chips already contains one billion transistors, but it still can not meet demand.
Previously the industry had predicted that the transistor can continue to "shrink" has become the bottleneck of the development of the chip industry, if not a breakthrough, "Moore's Law", or will come to an end. In this regard, the parties competing technological research strength, such as exploring the carbon nanotubes, graphene and other new materials applied to the transistor.
Since the "smaller" more and more difficult, why not from the structure to "reinvent the wheel"? Professor Zhang Wei led the team chose the other way. At present, the floating gate transistor structure including structure, tunneling structure, super junction structure, different range of applications since 2009, Fudan University researchers will be filled with imaginative tunneling structure and design of the floating gate structure device integration , constitutes a new "semi-floating gate" structure of the device.
Studies have shown that this new type of transistor with low power consumption and high integration density. If successfully applied to the chip design and manufacturing, in the storage and image-sensing area will have a huge potential market. For example, commonly used in the computer cache static random access memory, traditionally requires six floating gate structure to form a memory cell transistor, the use of Fudan present technique, one memory cell only a semi-floating gate transistor, cache degree of integration than the former increased by nearly 10 times, and the memory speed does not drop, lower power consumption, in order to win greater physical integrated circuit design and cost space.
you and I call the phone communication, computer networking tour the world, touch screen video ...... enjoy all this without the central role of the integrated circuit chip. Little transistor chip based devices as one of its direct impact on the structure and function of the chip effect, also known as the "Information Age of bricks." Recently, the Shanghai scientists first proposed and implemented a semi-floating-gate transistor structure of this new microelectronic devices, the future, the original results may give the world a significant impact in chip manufacturing.
Aug. 9 issue of "Science" magazine published the Fudan School of Microelectronics Zhang Wei team's paper, which is China's top scientists in the academic journals published in the field of microelectronic devices first original results.
Modern integrated circuit technology is mainly based on "Moore's Law": transistors on a chip feature sizes continue to shrink, the number increases every 18 months to double the chip performance has been increasing. In the past few decades, scientists from various countries go all out to put more transistors into a smaller chip. Currently a commercially available 22-nanometer chips already contains one billion transistors, but it still can not meet demand.
Previously the industry had predicted that the transistor can continue to "shrink" has become the bottleneck of the development of the chip industry, if not a breakthrough, "Moore's Law", or will come to an end. In this regard, the parties competing technological research strength, such as exploring the carbon nanotubes, graphene and other new materials applied to the transistor.
Since the "smaller" more and more difficult, why not from the structure to "reinvent the wheel"? Professor Zhang Wei led the team chose the other way. At present, the floating gate transistor structure including structure, tunneling structure, super junction structure, different range of applications since 2009, Fudan University researchers will be filled with imaginative tunneling structure and design of the floating gate structure device integration , constitutes a new "semi-floating gate" structure of the device.
Studies have shown that this new type of transistor with low power consumption and high integration density. If successfully applied to the chip design and manufacturing, in the storage and image-sensing area will have a huge potential market. For example, commonly used in the computer cache static random access memory, traditionally requires six floating gate structure to form a memory cell transistor, the use of Fudan present technique, one memory cell only a semi-floating gate transistor, cache degree of integration than the former increased by nearly 10 times, and the memory speed does not drop, lower power consumption, in order to win greater physical integrated circuit design and cost space.
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